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Hydrogen‐Induced Semiconductor Transformation of Lead Zirconate Titanate Ferroelectric Ceramics
Author(s) -
Huang H. Y.,
Chu W. Y.,
Su Y. J.,
Gao K. W.,
Li J. X.,
Qiao L. J.
Publication year - 2007
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2005.00871.x
Subject(s) - materials science , ferroelectricity , lead zirconate titanate , curie temperature , tetragonal crystal system , semiconductor , ceramic , mineralogy , condensed matter physics , dielectric , optoelectronics , composite material , crystal structure , crystallography , chemistry , ferromagnetism , physics
Semiconductor transformation of lead zirconate titanate (PZT)‐5H ferroelectric ceramics induced by hydrogen has been investigated. The results showed that hydrogen caused the PZT‐5H ferroelectric ceramics to transform from a yellow insulator into a black n ‐type semiconductor, and the leakage current and carrier concentration increased but the resistivity decreased with increasing hydrogen concentration. During charging in H 2 at a temperature higher than the Curie point, hydrogen would restrain the PZT‐5H ferroelectric ceramics to transform from cubic into tetragonal phase, resulting in the disappearance of ferroelectricity at room temperature. Charging at a temperature below the Curie point, however, did not change the crystal structure of the tetragonal ferroelectric ceramics. The properties and color of PZT‐5H ferroelectric ceramics were restored after outgassing at a high temperature.