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Temperature Dependence of the Electrical Properties and Seebeck Coefficient of AlN–SiC Ceramics
Author(s) -
Kobayashi Ryota,
Tatami Junichi,
Wakihara Toru,
Meguro Takeshi,
Komeya Katsutoshi
Publication year - 2006
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2005.00837.x
Subject(s) - materials science , seebeck coefficient , ceramic , sintering , electrical resistivity and conductivity , microstructure , thermoelectric effect , temperature coefficient , composite material , thermal conductivity , thermodynamics , electrical engineering , physics , engineering
AlN–SiC ceramics composed of AlN–SiC solid solutions were fabricated by pressureless sintering without sintering additives. The microstructure and electrical properties of the AlN–SiC ceramics were investigated for compositions between 0 and 75 mol% AlN. The AlN–SiC ceramics had a porous structure, and a 2H polytype was found in all compositions. The electrical conductivities and Seebeck coefficients of the AlN–SiC ceramics increased with temperature. The electrical conductivity of 25 mol% AlN–75 mol% SiC ceramics was the highest in all compositions: 32.7 S/m at 300°C. In contrast, the electrical conductivity of 75 mol% AlN–25 mol% SiC ceramics was much lower than that of other samples: 10 −2 S/m at 300°C. The Seebeck coefficient of 50 mol% AlN–50 mol% SiC ceramics was the highest of all samples: 210 μV/K at 300°C. The electrical and thermoelectrical properties of SiC can be controlled by the formation of AlN–SiC solid solutions.