Premium
High Thermal Conductivity Aluminum Nitride Substrates Prepared by Aqueous Tape Casting
Author(s) -
Luo Xiaojun,
Li Jun,
Zhang Baolin,
Li Wenlan,
Zhuang Hanrui
Publication year - 2006
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2005.00828.x
Subject(s) - dispersant , tape casting , materials science , microstructure , sintering , aqueous solution , thermal conductivity , nitride , composite material , aluminium , chemical engineering , metallurgy , chemistry , dispersion (optics) , physics , layer (electronics) , optics , engineering
High thermal conductivity aluminum nitride (AlN) substrates were prepared by aqueous tape casting. The characteristics of surface‐treated AlN powder were studied in aqueous ball‐milling media. The oxygen content of AlN powder with the dispersant was lower than that of AlN powder without the dispersant at the same ball‐milling time. The isoelectric points of the surface‐treated AlN with and without a dispersant were, respectively, at pH∼3.35 and pH∼3.90. The atmosphere had considerable effects on organic additive burnout of aqueous AlN green sheets. The composition of grain boundaries changed with increasing holding time at 1850°C. A translucent AlN substrate with a uniform microstructure and a thermal conductivity of 263 W·(m·K) −1 was obtained by pressureless sintering at 1850°C for 6 h in a nitrogen atmosphere.