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Highly Creep‐Resistant Silicon Nitride/Silicon Carbide Nano–Nano Composites
Author(s) -
Wan Julin,
Duan RenGuan,
Gasch Matthew J.,
Mukherjee Amiya K.
Publication year - 2006
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2005.00702.x
Subject(s) - materials science , silicon nitride , silicon carbide , nano , composite material , sintering , nanocrystalline silicon , nanocrystalline material , silicon , nitride , ceramic , nanocomposite , carbide , grain size , grain growth , amorphous solid , amorphous silicon , metallurgy , nanotechnology , crystalline silicon , layer (electronics) , crystallography , chemistry
A high creep resistance at specified temperature and compressive stress was obtained in this investigation in the silicon nitride/silicon carbide composite with a nano–nano structure (nanosized SiC and Si 3 N 4 in dual‐phase mixture) by a novel synthesis method. Starting from an amorphous Si–C–N powder derived from pyrolysis of a liquid polymer precursor, nanocomposites with varied grain size were achieved. With yttria additive amount decreasing from 8 to 1 wt% and eventually to zero, the structure underwent a transition from micro‐nano (nano‐sized SiC included in sub‐micron Si 3 N 4 ) to nano–nano type. Nanocrystalline silicon nitride/silicon carbide ceramic composite with 30–50 nm grain size was synthesized without using sintering additive.