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Carrier Generation in Wide‐Gap Conductor, Zinc Antimonate
Author(s) -
Kikuchi Naoto,
Hosono Hideo,
Kawazoe Hiroshi,
Tanegashima Osamu,
Ota Isao,
Kimura Yutaka
Publication year - 2005
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2005.00528.x
Subject(s) - antimonate , rutile , materials science , crystallinity , electrical resistivity and conductivity , zinc , rietveld refinement , band gap , conductivity , mineralogy , crystal structure , analytical chemistry (journal) , antimony , crystallography , metallurgy , chemistry , composite material , optoelectronics , electrical engineering , engineering , organic chemistry , chromatography
Mechanisms for carrier generation in zinc antimonate (ZnSb 2 O 6 ) with a wide band gap were examined in relation to its crystallinity. ZnSb 2 O 6 prepared by the reaction of Sb 2 O 5 sol and 3ZnCO 3 ·4Zn(OH) 2 was sintered at 893, 1173, and 1393 K, and characterized by X‐ray diffraction (XRD), electrical conductivity and diffuse reflectance measurements. A higher conductivity was found for ZnSb 2 O 6 sintered at lower temperatures. Rietveld analysis of XRD patterns showed that the cations in conductive ZnSb 2 O 6 occupied irregular sites, similar to the random rutile structure. Electron carriers were also considered to be generated by oxygen vacancies in ZnSb 2 O 6 samples which have a structure similar to the random rutile structure.