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Ferroelectric and Dielectric Properties of Pb(Mg 1/3 Ta 2/3 ) 0.7 Ti 0.3 O 3 Thin Films Derived from RF Magnetron Sputtering
Author(s) -
Li Fang,
Xue Junmin,
Wang John
Publication year - 2005
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2005.00499.x
Subject(s) - materials science , ferroelectricity , thin film , dielectric , annealing (glass) , sputter deposition , sputtering , coercivity , analytical chemistry (journal) , perovskite (structure) , mineralogy , polarization (electrochemistry) , permittivity , composite material , optoelectronics , condensed matter physics , nanotechnology , crystallography , chemistry , physics , chromatography
Pb(Mg 1/3 Ta 2/3 ) 0.7 Ti 0.3 O 3 thin films of single perovskite phase were successfully synthesized by using the RF sputtering deposition technique, followed by post‐thermal annealing. While the perovskite structure of Pb(Mg 1/3 Ta 2/3 ) 0.7 Ti 0.3 O 3 is rather unstable, phase evolution in the thin films was manipulated by controlling both working pressure during the sputtering process and post‐thermal annealing temperature. The desirable perovskite phase was promoted by increasing the working pressure in the range of 10–25 mTorr, followed by thermal annealing at 600°C. The ferroelectric, dielectric, and polarization behaviors of Pb(Mg 1/3 Ta 2/3 ) 0.7 Ti 0.3 O 3 films were characterized over a wide range of frequencies. They are strongly affected by the film thickness, where the relative permittivity and remanent polarization increase, while the coercive field decreases with increasing film thickness in the range of 115–360 nm.