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Preparation of Sputtered (Ba x ,Sr 1− x )TiO 3 Thin Films Directly on Copper
Author(s) -
Laughlin Brian,
Ihlefeld Jon,
Maria JonPaul
Publication year - 2005
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2005.00488.x
Subject(s) - materials science , dissipation factor , thin film , copper , cavity magnetron , transmission electron microscopy , dielectric , analytical chemistry (journal) , sputter deposition , dielectric loss , diffraction , sputtering , metal , permittivity , optoelectronics , optics , metallurgy , chemistry , nanotechnology , physics , chromatography
(Ba 0.6 ,Sr 0.4 )TiO 3 (BST) films were deposited on copper foils by radio frequency magnetron sputtering. By the use of controlled p O 2 high‐temperature anneals, the films were completely crystallized in the absence of substrate oxidation. X‐ray diffraction and transmission electron microscopy (TEM) revealed an abrupt Cu/BST interface. The deposited BST films exhibit a zero bias permittivity and loss tangent values of 600 and 0.018, respectively. An electrical tunability ratio of 3.5:1 is observed on these metal–insulator–metal devices. Devices show leakage currents of 10 −8 A/cm 2 at ±10 V/μm, and loss tangents as low as 0.003 in fields approaching 40 V/μm.