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In Situ Growth of β‐SiC Nanowires in Porous SiC Ceramics
Author(s) -
Zhu Sumin,
Xi HongAn,
Li Qin,
Wang Ruoding
Publication year - 2005
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2005.00460.x
Subject(s) - nanowire , materials science , microstructure , transmission electron microscopy , silicon carbide , scanning electron microscope , ceramic , vapor–liquid–solid method , porosity , porous silicon , energy dispersive x ray spectroscopy , nanotechnology , chemical engineering , composite material , engineering
Polycarbosilane (PCS) was used as a precursor to prepare porous silicon carbide (SiC) ceramics with in situ growth of β‐SiC nanowires. The pore size of the as‐prepared porous ceramics was 1.37 μm in average, and had a narrow distribution. The nanowires with diameters ranging from ∼10 to 50 nm existed in the channels of the porous body. Their morphology, microstructure, and composition were characterized by field emission scanning electron microscopy, transmission electron microscopy, and energy‐dispersive X‐ray spectroscopy, which confirmed that the nanowires had a single‐crystal β‐SiC structure with the 〈111〉 growth direction. A vapor–liquid–solid process was discussed as a possible growth mechanism of the β‐SiC nanowires.