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Gas Release of SiC Implanted with Deuterium or Helium
Author(s) -
Aihara J.,
Sawa K.,
Furuya Y.,
Hojo T.,
Furuno S.,
Yamamoto H.,
Hojou K.,
Ishihara M.
Publication year - 2005
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2005.00405.x
Subject(s) - helium , deuterium , crystallite , analytical chemistry (journal) , ion , materials science , activation energy , spectral line , chemistry , radiochemistry , atomic physics , physics , organic chemistry , chromatography , astronomy , metallurgy
Helium (He + ) or Deuterium (D 2 + ) (20 keV) was implanted into polycrystalline β‐SiC with an ion dose of 7.2 × 10 21 (D or He)/m 2 . The implanted specimens were heated at a heating rate of 10 or 20 K/min from room temperature to 1373 K, and the thermal release spectroscopic data were obtained. A sharp peak appeared at approximately 1270 K in the case of He release, and here the activation energy was estimated to be approximately 4.4 eV. Two overlapped peaks appeared at approximately 900 and 1200 K in the case of D 2 release. The shapes of spectra showed strong dependence on the heating rate.