Premium
Influence of Synthesis Temperature on the Defect Structure of Boron Carbide: Experimental and Modeling Studies
Author(s) -
AnselmiTamburini Umberto,
Munir Zuhair A.,
Kodera Yasuhiro,
Imai Takahito,
Ohyanagi Manshi
Publication year - 2005
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2005.00245.x
Subject(s) - boron carbide , transmission electron microscopy , materials science , carbide , diffraction , boron , electron diffraction , crystallography , metallurgy , nanotechnology , chemistry , optics , physics , organic chemistry
Boron carbide (B 4 C) was synthesized from the elements at temperatures ranging from 1300° to 2100°C using the spark plasma synthesis method. Significant densification commenced at about 1500°C and was accompanied by a corresponding decrease in the defect structure of this carbide. Changes in the X‐ray diffraction patterns were in agreement with predictions of simulation studies based on the presence of twins. Transmission electron microscopy observations were consistent with the experimental observations and the modeling predictions.