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Preparation of YBCO Films on CeO 2 ‐Buffered (001) YSZ Substrates by a Non‐Fluorine MOD Method
Author(s) -
Xu Y.,
Goyal A.,
Lian J.,
Rutter N. A.,
Shi D.,
Sathyamurthy S.,
Paranthaman M.,
Wang L.,
Martin P. M.,
Kroeger D. M.
Publication year - 2004
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2004.01669.x
Subject(s) - materials science , yttria stabilized zirconia , yttrium , annealing (glass) , partial pressure , analytical chemistry (journal) , oxygen , epitaxy , cubic zirconia , oxide , metallurgy , composite material , ceramic , chemistry , layer (electronics) , organic chemistry , chromatography
YBa 2 Cu 3 O 7−δ (YBCO) films were fabricated via a fluorine‐free metal organic deposition (MOD) method followed by high‐temperature, low oxygen partial pressure annealing. Trimethyl acetate salts of copper, yttrium, and barium hydroxide were used as the precursors, which were dissolved in proponic acid‐ and amine‐based solvents. After spin‐coating and burnout, samples were annealed at 740°C in 180 ppm oxygen partial pressure and exposed to humid atmosphere for different times. A critical transition temperature, T c ( R =0) of 90.2 K and a transport critical current density ( J c ) of 0.55 MA/cm 2 (77 K and self‐field) were obtained for 0.2 μm YBCO films on CeO 2 ‐buffered yttria‐stabilized zirconia (YSZ) substrates. X‐ray studies shows that the YBCO films have sharp in‐plane and out‐of‐plane texture for all samples; however, the porosity of the YBCO film varies with the time of exposure to the humid atmosphere. A reaction between YBCO and CeO 2 during the high‐temperature anneals and formation of the reaction product BaCeO 3 was confirmed by X‐ray diffraction (XRD) studies. The XRD and transmission electron microscopy analysis indicated that the epitaxial relations in the film were YBCO (00 l )//CeO 2 (00 l )//YSZ (00 l ) and YBCO [100]//CeO 2 [110]//YSZ [110].