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Effect of Amount of Boron Doping on Compression Deformation of Fine‐Grained Silicon Carbide at Elevated Temperature
Author(s) -
Shinoda Yutaka,
Yoshida Michiyuki,
Akatsu Takashi,
Wakai Fumihiro
Publication year - 2004
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2004.01525.x
Subject(s) - materials science , doping , boron , silicon carbide , grain boundary , grain size , grain boundary diffusion coefficient , flow stress , deformation (meteorology) , silicon , stress (linguistics) , boron carbide , composite material , metallurgy , strain rate , microstructure , chemistry , optoelectronics , linguistics , philosophy , organic chemistry
The effect of the amount of boron doping in the range of 0 to 1.0 wt% on the high‐temperature deformation of fine‐grained β‐silicon carbide (SiC) was investigated by compression testing. Flow stress at the same grain size increased as the amount of boron doping decreased. The stress exponent increased from 1.3 to 3.4 as the amount of boron doping decreased. The strain rates of undoped SiC were ∼2 orders of magnitude lower than those of 1.0‐wt%‐boron‐doped SiC of the same grain size. The apparent activation energies of SiC doped with 1.0 wt% boron and of undoped SiC were 771 ± 12 and 884 ± 80 kJ/mol, respectively. These results suggest that the actual contribution of grain‐boundary diffusion to the accommodation process of grain‐boundary sliding decreased as the amount of boron doping decreased. Consequently, the apparent contribution of the dislocation glide increased.