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Use of Stress To Produce Highly Oriented Tetragonal Lead Zirconate Titanate (PZT 40/60) Thin Films and Resulting Electrical Properties
Author(s) -
Brennecka Geoff L.,
Huebner Wayne,
Tuttle Bruce A.,
Clem Paul G.
Publication year - 2004
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2004.01459.x
Subject(s) - materials science , lead zirconate titanate , tetragonal crystal system , thin film , dielectric , stress (linguistics) , composite material , deposition (geology) , ferroelectricity , curie temperature , electrode , zirconate , crystal structure , mineralogy , crystallography , titanate , nanotechnology , ceramic , optoelectronics , condensed matter physics , chemistry , philosophy , linguistics , biology , paleontology , physics , ferromagnetism , sediment
Thin films of Pb(Zr 0.4 Ti O.6 )O 3 produced by chemical solution deposition were used to study the effects of stress from different platinized single‐crystal substrates on film orientation and resulting electrical properties. Films deposited on MgO preferred a (001) orientation due to compressive stress on the film during cooling through the Curie temperature ( T C ). Films on Al 2 O 3 were under minimal stress at T C , resulting in a mixture of orientations. Those on Si preferred a (111) orientation due to templating from the bottom electrode. Films oriented in the 〈001〉 direction demonstrated lower dielectric constants and higher P r and − d 31 values than (111) films.