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Direct Characterization of Grain‐Boundary Electrical Activity in Doped (Ba 0.6 Sr 0.4 )TiO 3 by Combined Imaging of Electron‐Beam‐Induced Current and Electron‐Backscattered Diffraction
Author(s) -
Hayashi Katsuro,
Yamamoto Takahisa,
Ikuhara Yuichi,
Sakuma Taketo
Publication year - 2004
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2004.01153.x
Subject(s) - grain boundary , electrical resistivity and conductivity , scanning electron microscope , crystallite , materials science , temperature coefficient , condensed matter physics , resistive touchscreen , electron beam induced current , doping , mineralogy , chemistry , microstructure , optoelectronics , physics , composite material , quantum mechanics , electrical engineering , metallurgy , engineering
Simultaneous measurements of remote electron beam induced current (REBIC) and orientation imaging microscopy (OIM) in a scanning electron microscope (SEM) have been applied to a polycrystalline (Ba 0.6 Sr 0.4 )TiO 3 with a positive temperature coefficient of resistivity (PTCR) to elucidate a grain‐boundary character dependence of the potential barrier formation. The absence of electrical activity in a coherent Σ3 twin boundary is clearly imaged. The resistivity of individual grain boundaries estimated from a resistive contrast image is interpreted in terms of geometrical coherency, which is defined by the degree of coincidence in the reciprocal lattice points.