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Effects of Zirconium Doping on Grain‐Boundary Bonding in Alumina‐Silicon Carbide Composites
Author(s) -
Deng ZhenYan,
Xu FangFang,
She Jihong,
Tanaka Yoshihisa,
Bando Yoshio
Publication year - 2004
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2004.00493.x
Subject(s) - materials science , grain boundary , fracture toughness , composite material , zirconium , composite number , doping , transgranular fracture , intergranular corrosion , dopant , silicon carbide , intergranular fracture , metallurgy , microstructure , optoelectronics
In this work, 800 ppm of Zr 4+ dopants were added to Al 2 O 3 ‐5 vol% SiC particle composite. Zr 4+ doping led to a weak Al 2 O 3 grain‐boundary bonding so that the fracture mode changed from transgranular in undoped composite to intergranular in Zr 4+ ‐doped composite. The fracture mode change increased the fracture toughness of the composite. Transmission electron microscopy and energy‐dispersive spectroscopy examinations revealed that the weak grain‐boundary bonding in the doped composite was caused by the segregation of Zr 4+ and Si 4+ ions at the Al 2 O 3 grain boundary.