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Oxidation Behavior of a Fully Dense Polymer‐Derived Amorphous Silicon Carbonitride Ceramic
Author(s) -
Bharadwaj Lavanya,
Fan Yi,
Zhang Ligong,
Jiang Dapeng,
An Linan
Publication year - 2004
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2004.00483.x
Subject(s) - materials science , ceramic , amorphous solid , activation energy , kinetics , silicon , pyrolysis , diffusion , polymer , oxide , chemical engineering , silicon oxide , atmospheric temperature range , oxygen , composite material , silicon nitride , chemistry , crystallography , metallurgy , thermodynamics , organic chemistry , physics , quantum mechanics , engineering
The oxidation behavior of a polymer‐derived amorphous silicon carbonitride (SiCN) ceramic was studied at temperature range of 900°–1200°C using fully dense samples, which were obtained using a novel pressure‐assisted pyrolysis technique. The oxidation kinetics was investigated by measuring the thickness of oxide layers. The data were found to fit a typical parabolic kinetics. The measured oxidation rate constant and activation energy of the SiCN are close to those of CVD and single‐crystal SiC. The results suggest that the oxidation mechanism of the SiCN is the same as that of SiC: oxygen diffusion through a silica layer.