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Domain Structure and Fatigue Behavior of La 3+ ‐Doped SrBi 2 Ta 2 O 9 Thin Films
Author(s) -
Liu Jingsong,
Zhang Shuren,
Yang Chengtao,
Dai Linshan
Publication year - 2005
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2004.00026.x
Subject(s) - ferroelectricity , piezoresponse force microscopy , materials science , microstructure , thin film , doping , perovskite (structure) , crystallography , polarization (electrochemistry) , pulsed laser deposition , mineralogy , condensed matter physics , composite material , dielectric , nanotechnology , optoelectronics , chemistry , physics
Ferroelectric SrBi 1.4 La 0.6 Ta 2 O 9 (SBLT) thin films were grown onto Pt/Ti/SiO 2 /Si substrates by pulsed‐laser deposition. With the aid of X‐ray diffractometry, piezoresponse scanning probe microscopy, and ferroelectric‐property measurements, a correlation between microstructure, as well as domain structure and ferroelectric properties, was established. Excluding the effect of preferential orientation on ferroelectric properties, the increase in remanent polarization was attributed to distortion of the perovskite‐like sublattice and atom displacement. Despite the co‐instantaneous observation of a 90° domain and slight fatigue behavior in the SBLT films, the 90° domain‐wall clamping did not seem to account for the fatigue in the SBLT films. Instead, strain‐stress aggravation of the SBLT sublattice, due to the substitution of La 3+ into Bi 3+ sites, decreased the self‐regulated flexibility of the (Bi 2 O 2 ) 2+ layers and caused fatigue in the SBLT.