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High‐Temperature Oxidation of Boron Nitride: I, Monolithic Boron Nitride
Author(s) -
Jacobson Nathan,
Farmer Serene,
Moore Arthur,
Sayir Haluk
Publication year - 1999
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.1999.tb20075.x
Subject(s) - boron nitride , boron , diffusion , porosity , materials science , kinetics , nitride , impurity , chemical engineering , analytical chemistry (journal) , layer (electronics) , chemistry , nanotechnology , composite material , thermodynamics , organic chemistry , physics , quantum mechanics , engineering
High‐temperature oxidation of monolithic boron nitride (BN) is examined at 900–1200°C. Hot‐pressed BN and both low‐ and high‐density chemically vapor‐deposited BN are studied. The oxidation product is B 2 O 3 ( l ) and the oxidation kinetics are sensitive to crystallographic orientation, porosity, and impurity levels. The B 2 O 3 product also reacts readily with ambient water vapor in the test furnace (ppm levels) to form the volatile species HBO 2 ( g ), leading to overall paralinear kinetics. The linear rate constant extracted from these experiments agreed with that predicted from diffusion of HBO 2 ( g ) across a static boundary layer.