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Effect of Diluent Gases on Growth Behavior and Characteristics of Chemically Vapor Deposited Silicon Carbide Films
Author(s) -
Kim HanSu,
Choi DooJin
Publication year - 1999
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.1999.tb20066.x
Subject(s) - diluent , microstructure , materials science , chemical vapor deposition , silicon carbide , graphite , argon , hydrogen , chemical engineering , carbide , plasma enhanced chemical vapor deposition , chemistry , composite material , nanotechnology , nuclear chemistry , organic chemistry , engineering
SiC films were chemically vapor deposited onto graphite substrates using methyltrichlorosilane (MTS, CH 3 SiCl 3 ) as a source and argon or hydrogen as diluent gases to investigate the effect of each diluent gas on growth behavior and characteristics. Each diluent gas used had a relative difference in deposition rate within a certain temperature region. Such growth characteristics of the SiC films as preferred orientation, microstructure, and chemical composition varied remarkably with the diluent gas used. Microhardness and surface roughness were compared for SiC films prepared using the different diluent gases.