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Novel combination of orientation measurements and transmission microscopy for experimental determination of grain boundary miller indices in silicon and other semiconductors
Author(s) -
FUNKE C.,
BEHM T.,
HELBIG R.,
SCHMID E.,
WÜRZNER S.
Publication year - 2012
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.2011.03588.x
Subject(s) - wafer , materials science , grain boundary , transmission electron microscopy , silicon , semiconductor , boundary (topology) , optical microscope , microscopy , optics , crystallography , scanning electron microscope , optoelectronics , nanotechnology , metallurgy , composite material , microstructure , chemistry , physics , mathematics , mathematical analysis
Summary The determination of grain boundary planes in multicrystalline material has only been restricted to transmission electron microscope investigations (Jang et al. , 1992; Elgat et al. , 1985) or to metallograpical investigations of the grain boundary (Randle et al. , 1993). The first method is expensive, and both are complex and time consuming in grain boundary preparation. This paper proposes the determination of grain boundary planes in semiconductor wafer by a combined application of Electron Back Scatter Diffraction and Infrared Transmission Microscopy. In particular, the new method is demonstrated with directional solidificated multicrystalline silicon.