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Imaging of Bernal stacked and misoriented graphene and boron nitride: experiment and simulation
Author(s) -
ZAN R.,
BANGERT U.,
RAMASSE Q.,
NOVOSELOV K.S.
Publication year - 2011
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.2011.03520.x
Subject(s) - graphene , boron nitride , materials science , transmission electron microscopy , layer (electronics) , nitride , boron , high resolution transmission electron microscopy , nanotechnology , image resolution , optics , chemistry , physics , organic chemistry
Summary Experimental atomic resolution bright and high angle dark field transmission electron microscopy images of mono‐ and few‐layer graphene and boron nitride, as well as of turbostratic arrangements in both materials, are compared to their simulated counterparts. Changes in the images according to defocus, layer number and accelerating voltage are discussed. It emerges that simulations with realistic microscope parameters accurately depict experimental graphene and boron nitride images and present a reliable tool for their interpretation.