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Low‐energy electron scattering in carbon‐based materials analyzed by scanning transmission electron microscopy and its application to sample thickness determination
Author(s) -
PFAFF M.,
MÜLLER E.,
KLEIN M. F. G.,
COLSMANN A.,
LEMMER U.,
KRZYZANEK V.,
REICHELT R.,
GERTHSEN D.
Publication year - 2011
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.2010.03475.x
Subject(s) - scanning transmission electron microscopy , scattering , electron , materials science , energy filtered transmission electron microscopy , electron scattering , monte carlo method , transmission electron microscopy , dark field microscopy , molecular physics , scanning electron microscope , atomic physics , optics , microscopy , chemistry , physics , nanotechnology , statistics , mathematics , quantum mechanics , composite material
Summary High‐angle annular dark‐field scanning transmission electron microscopy (HAADF STEM) at low energies (≤30 keV) was used to study quantitatively electron scattering in amorphous carbon and carbon‐based materials. Experimental HAADF STEM intensities from samples with well‐known composition and thickness are compared with results of Monte Carlo simulations and semiempirical equations describing multiple electron scattering. A well‐defined relationship is found between the maximum HAADF STEM intensity and sample thickness which is exploited (a) to derive a quantitative description for the mean quadratic scattering angle and (b) to calculate the transmitted HAADF STEM intensity as a function of the relevant materials parameters and electron energy. The formalism can be also applied to determine TEM sample thicknesses by minimizing the contrast of the sample as a function of the electron energy.