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New approach to cathodoluminescence studies in application to InGaN/GaN laser diode degradation
Author(s) -
PŁUSKA M.,
CZERWINSKI A.,
RATAJCZAK J.,
KĄTCKI J.,
MARONA L.,
CZERNECKI R.,
LESZCZYŃSKI M.,
PERLIN P.
Publication year - 2009
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.2009.03285.x
Subject(s) - cathodoluminescence , electron beam induced current , diode , optoelectronics , materials science , degradation (telecommunications) , laser , laser diode , optics , silicon , electronic engineering , physics , luminescence , engineering
Summary Cathodoluminescence (CL) studies are widely applied in semi‐conductor science and technology. However, for structures with a p‐n junction the CL spatial distribution can be strongly affected by internal current flows of the electron beam induced current generated within the structure. This influence is the investigated in application to CL studies of degradation in aged laser diodes with InGaN multiquantum wells.