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TEM characterization of MBE grown CdTe/ZnTe axial nanowires
Author(s) -
DŁUZEWSKI P.,
JANIK E.,
KRET S.,
ZALESZCZYK W.,
TANG D.,
KARCZEWSKI G.,
WOJTOWICZ T.
Publication year - 2010
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.2009.03256.x
Subject(s) - nanowire , molecular beam epitaxy , materials science , cadmium telluride photovoltaics , stacking , characterization (materials science) , epitaxy , nanostructure , optoelectronics , vapor–liquid–solid method , spectroscopy , crystallography , nanotechnology , layer (electronics) , chemistry , physics , organic chemistry , quantum mechanics
Summary CdTe/ZnTe axial nanowires were successfully fabricated by molecular beam epitaxy with the use of Au nano‐catalysts and vapour–liquid–solid growth mechanism. Nanowires had zinc‐blende structure with numerous stacking faults in the bottom ZnTe part and near perfect crystalline structure in the top CdTe part. Energy dispersive X‐ray spectroscopy (EDXS) and lattice fringe spacing analysis revealed nonabrupt nature of hetero−interface, whose width was estimated to be 50–70 nm for the nanowires having a diameter in the range from 40 to 50 nm.