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TEM determination of directions of (Ga,Mn)As nanowires grown by MBE on GaAs(001) substrates
Author(s) -
DŁUŻEWSKI P.,
SADOWSKI J.,
KRET S.,
DĄBROWSKI J.,
SOBCZAK K.
Publication year - 2009
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.2009.03255.x
Subject(s) - nanowire , materials science , manganese , nanotechnology , optoelectronics , metallurgy
Summary The structure of GaMnAs nanowires (NW) with nominal Mn concentration of up to 7 at% was investigated by transmission electron microscopy. The (Ga,Mn)As NW were grown on epiready GaAs(001) n ‐type wafers by molecular beam epitaxy. The crystal structure of the NW was determined to be zinc‐blende. NW with Mn concentrations lower than 5 at% grow along the 〈111〉 direction. NW with higher Mn concentrations grow along the 〈110〉 direction and reveal a branching structure. The main nanowire and branches grow along the 〈110〉 directions belonging to only one {111} plane.