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Dependence of cathodoluminescence on layer resistance applied for measurement of thin‐layer sheet resistance
Author(s) -
CZERWINSKI A.,
PLUSKA M.,
RATAJCZAK J.,
SZERLING A.,
KąTCKI J.
Publication year - 2010
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.2009.03248.x
Subject(s) - cathodoluminescence , materials science , layer (electronics) , semiconductor , sheet resistance , heterojunction , scanning electron microscope , spreading resistance profiling , thin film , optics , optoelectronics , composite material , nanotechnology , luminescence , physics , doping
Summary The dependence of spatially and spectrally resolved cathodoluminescence in a scanning electron microscope on resistances in semiconductor structures, especially on the layer resistance, is reported. This previously unstudied dependence is utilized for thin‐layer sheet‐resistance measurement. The method is illustrated by an assessment of lateral confinements in semiconductor‐laser heterostructures.