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Depth measurements of etch‐pits in GaN with shape reconstruction from SEM images
Author(s) -
WZOREK M.,
CZERWINSKI A.,
RATAJCZAK J.,
LUI A.,
IACOB E.,
KĄTCKI J.
Publication year - 2010
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.2009.03232.x
Subject(s) - materials science , scanning electron microscope , enhanced data rates for gsm evolution , etching (microfabrication) , eutectic system , morphology (biology) , dislocation , optics , composite material , microstructure , geology , layer (electronics) , computer science , physics , telecommunications , paleontology
Summary The method, which allows shape reconstruction by reading the intensity from the scanning electron microscopy image, is presented and discussed in details. The method is applied to read the morphology of etch‐pits, which were formed on the GaN surface by etching in molten KOH–NaOH eutectic mixture to delineate dislocations. The etch‐pit depth distributions are obtained and used to determine densities of pits related to screw, mixed or edge‐type dislocations. The results are compared with atomic force microscopy.