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Quantitative off‐axis electron holography of GaAs p‐n junctions prepared by focused ion beam milling
Author(s) -
COOPER D.,
TRUCHE R.,
TWITCHETTHARRISON A.C.,
DUNINBORKOWSKI R.E.,
MIDGLEY P.A.
Publication year - 2009
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.2008.03101.x
Subject(s) - electron holography , holography , focused ion beam , ion milling machine , materials science , annealing (glass) , ion , electron , biasing , ion beam , optoelectronics , cathode ray , optics , beam (structure) , nanotechnology , chemistry , voltage , physics , composite material , layer (electronics) , quantum mechanics , organic chemistry
Summary Focused Ion beam (FIB) prepared GaAs p‐n junctions have been examined using off‐axis electron holography. Initial analysis of the holograms reveals an experimentally determined built‐in potential in the junctions that is significantly smaller than predicted from theory. In this paper we show that through combinations of in situ annealing and in situ biasing of the specimens, by varying the intensity of the incident electron beam, and by modifying the FIB operating parameters, we can develop an improved understanding of phenomena such as the electrically ‘inactive’ thickness and subsequently recover the predicted value of the built‐in potential of the junctions. PACS numbers: 85.30.De