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Two‐dimensional dopant profiling with low‐energy SEM
Author(s) -
MIKA F.,
FRANK L.
Publication year - 2008
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.2008.01957.x
Subject(s) - dopant , doping , scanning electron microscope , materials science , contrast (vision) , reproducibility , electron , secondary electrons , analytical chemistry (journal) , nanotechnology , optics , optoelectronics , chemistry , physics , environmental chemistry , chromatography , composite material , quantum mechanics
Summary The scanning electron microscope has proven itself efficient for determining dopant concentrations in semiconductors. Contrast between differently doped areas is observable in the secondary electron emission. Multiple studies have revealed quantitative relations between the image contrast and dopant concentration. However, intimate examination shows a low reproducibility of the contrast level for a particular local difference between the doping rates. Data about dynamic behaviour of the dopant contrast and its dependence on the status of the sample surface are presented.