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High‐pass energy‐filtered photoemission electron microscopy imaging of dopants in silicon
Author(s) -
HOVORKA M.,
FRANK L.,
VALDAITSEV D.,
NEPIJKO S.A.,
ELMERS H.S.,
SCHÖNHENSE G.
Publication year - 2008
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.2008.01953.x
Subject(s) - photoemission electron microscopy , silicon , dopant , electron microscope , low energy electron microscopy , materials science , electron , microscopy , energy filtered transmission electron microscopy , angle resolved photoemission spectroscopy , energy (signal processing) , inverse photoemission spectroscopy , scanning confocal electron microscopy , photoemission spectroscopy , atomic physics , doping , optoelectronics , nanotechnology , optics , scanning transmission electron microscopy , physics , transmission electron microscopy , x ray photoelectron spectroscopy , condensed matter physics , nuclear magnetic resonance , electronic structure , nuclear physics , quantum mechanics
Summary Differently doped areas in silicon can show strong electron‐optical contrast in dependence on the dopant concentration and surface conditions. Photoemission electron microscopy is a powerful surface‐sensitive technique suitable for fast imaging of doping‐induced contrast in semiconductors. We report on the observation of Si (100) samples with n‐ and p‐type doped patterns (with the dopant concentration varied from 10 16 to 10 19 cm −3 ) on a p‐ and n‐type substrate (doped to 10 15 cm −3 ), respectively. A high‐pass energy filter of the entire image enabled us to obtain spectroscopic information, i.e. quantified photo threshold and related photoyield differences depending on the doping level. Measurements have confirmed the possibility of resolving areas at a high contrast even with the lowest dopant concentration when employing the energy filter. The influence of electron absorption phenomena on contrast formation is discussed.