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Study of the optical response of phase‐change recording layer with zinc oxide nanostructured thin film
Author(s) -
KAO T. S.,
FU Y. H.,
HSU H. W.,
TSAI D. P.
Publication year - 2008
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.2008.01944.x
Subject(s) - zinc , layer (electronics) , materials science , thin film , phase change , oxide , phase (matter) , thin layer , optoelectronics , nanotechnology , optics , metallurgy , chemistry , engineering physics , physics , organic chemistry
Summary Recently, use of nanostructured materials as a near‐field optical active layer has attracted a lot of interest. The non‐linear optical properties and strong enhancements of metallic oxide nanostructured thin films are key functions in applications of promising nanophotonics. For the importance of ultra‐high density optical data storage, we continue investigating the ultra‐high density recording property of near‐field optical disk consisting of zinc oxide (ZnO x ) nanostructured thin film. A carrier‐to‐noise ratio above 38 dB at a recording mark size of 100 nm can be obtained in the ZnO x near‐field optical disk by a DVD driver tester directly. In this article, we use an optical pump‐probe system (static media tester) to measure the optical response of a phase‐change recording layer (Ge 2 Sb 2 Te 5 ) and demonstrate the high contrast of optical recording with a ZnO x nanostructured thin film in short pulse durations. Also, we investigate the dependence of writing power and the optical response in conventional re‐writable recording layers and the phase‐change material with ZnO x nanostructured thin film.