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Stress imagining of semiconductor surface by tip‐enhanced Raman spectroscopy
Author(s) -
SAITO Y,
MOTOHASHI M.,
HAYAZAWA N.,
KAWATA S.
Publication year - 2008
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.2008.01889.x
Subject(s) - raman spectroscopy , materials science , silicon , nanoscopic scale , silicon nitride , phonon , excitation , stress (linguistics) , semiconductor , optics , optoelectronics , diffraction , surface stress , germanium , coherent anti stokes raman spectroscopy , image resolution , raman scattering , nanotechnology , condensed matter physics , composite material , linguistics , philosophy , physics , surface energy , electrical engineering , engineering
Summary Tip‐enhanced Raman imaging of strained silicon reveals the property of nanoscale stress imposed on the lattice. Our approach relies on the highly localized excitation provided by a metallized tip. Surface sensitive detections in nanoscale are realized by a reflection‐mode configuration combined with 442‐nm excitation and a silver‐coated silicon nitride tip. The background signals from an underlying silicon germanium layer and a tip are well suppressed. The quantitative stress analysis is made on the basis of the Raman shift of the Si–Si phonon mode. We succeeded in visualizing the localized stress with a spatial resolution down to 25 nm whereas a conventional micro Raman technique provides only a uniform image because of the averaging effect within a diffraction‐limited focused spot.