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Buried amorphous‐layer impact on dislocation densities in silicon
Author(s) -
WZOREK M.,
KĄTCKI J.,
PŁUSKA M.,
RATAJCZAK J.,
JAROSZEWICZ B.,
DOMAŃSKI K.,
GRABIEC P.
Publication year - 2006
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.2006.01677.x
Subject(s) - materials science , amorphous solid , dislocation , transmission electron microscopy , recrystallization (geology) , annealing (glass) , silicon , amorphous silicon , isotropic etching , etching (microfabrication) , surface layer , composite material , crystallography , layer (electronics) , crystalline silicon , optoelectronics , nanotechnology , chemistry , geology , paleontology
Summary The impact of amorphous layers on dislocation densities in silicon piezoresistors was investigated by means of transmission electron microscopy and chemical etching. Mechanical bevel polishing at a shallow angle and selective etching were applied to assess the dislocation depth distributions. It was found that, despite the presence of additional defects after recrystallization, the initial presence of a buried amorphous layer reduced, after annealing, the dislocation density in the depletion region of a p – n junction, compared with the case of a shallower, surface amorphous layer.