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In situ electron beam induced current measurements of the local thickness in semiconductor devices
Author(s) -
CZERWINSKI A.,
PŁUSKA M.,
RATAJCZAK J.,
KATCKI J.
Publication year - 2006
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.2006.01671.x
Subject(s) - overlayer , electron beam induced current , semiconductor , materials science , faraday cup , cathode ray , optics , semiconductor device , layer (electronics) , electron , planar , characterization (materials science) , current (fluid) , beam (structure) , optoelectronics , physics , silicon , nanotechnology , condensed matter physics , computer science , ion beam , computer graphics (images) , quantum mechanics , thermodynamics
Summary A quantitative electron beam induced current method is shown, applicable in situ for electron beam current measurement on a semiconductor sample without the need for a Faraday cup. As a validation technique, the measurement of top overlayer thickness in the semiconductor structure was chosen for two reasons. First, the measured thickness is easily verified using the same electron microscope in the secondary electron mode by measuring the layer thickness at the layer edges. Second, the measurement of a layer thickness and its local variations constitute an important issue in semiconductor processing and characterization. The proposed method is used in the planar view of the sample, and also for locations far from the layer edges. Quasi‐three‐dimensional maps of the thickness spatial distribution are presented.