Transmission electron microscopy characterization of the erbium silicide formation process using a Pt/Er stack on a silicon‐on‐insulator substrate | Zendy

ŁASZCZ A. | Zendy; KĄTCKI J. | Zendy; RATAJCZAK J. | Zendy; TANG XIAOHUI | Zendy; DUBOIS E. | Zendy

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Transmission electron microscopy characterization of the erbium silicide formation process using a Pt/Er stack on a silicon‐on‐insulator substrate

Author(s) -

ŁASZCZ A.,

KĄTCKI J.,

RATAJCZAK J.,

TANG XIAOHUI,

DUBOIS E.

Publication year - 2006

Publication title -

journal of microscopy

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.569

H-Index - 111

eISSN - 1365-2818

pISSN - 0022-2720

DOI - 10.1111/j.1365-2818.2006.01653.x

Subject(s) - silicide , erbium , materials science , silicon , transmission electron microscopy , annealing (glass) , silicon on insulator , substrate (aquarium) , crystallography , optoelectronics , nanotechnology , metallurgy , chemistry , doping , oceanography , geology

Summary Very thin erbium silicide layers have been used as source and drain contacts to n ‐type Si in low Schottky barrier MOSFETs on silicon‐on‐insulator substrates. Erbium silicide is formed by a solid‐state reaction between the metal and silicon during annealing. The influence of annealing temperature (450 °C, 525 °C and 600 °C) on the formation of an erbium silicide layer in the Pt/Er/Si/SiO 2 /Si structure was analysed by means of cross‐sectional transmission electron microscopy. The Si grains/interlayer formed at the interface and the presence of Si grains within the Er‐related layer constitute proof that Si reacts with Er in the presence of a Pt top layer in the temperature range 450–600 °C. The process of silicide formation in the Pt/Er/Si structure differs from that in the Er/Si structure. At 600 °C, the Pt top layer vanishes and a (Pt–Er)Si x system is formed.

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