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TEM study of indium and gallium nitride nanocrystals in silica gasses obtained by the sol‐gel method
Author(s) -
KRAJCZYK L.,
JABŁOŃSKI J. M.,
NYK M.,
STRĘK W.,
MISIEWICZ J.
Publication year - 2006
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.2006.01627.x
Subject(s) - calcination , transmission electron microscopy , materials science , sol gel , indium , nanocrystal , gallium , indium gallium nitride , chemical engineering , gallium nitride , phase (matter) , morphology (biology) , silica gel , nanotechnology , layer (electronics) , optoelectronics , chemistry , catalysis , composite material , metallurgy , organic chemistry , biology , engineering , genetics , biochemistry
Summary GaN and InN nanocrystals in silica glasses prepared by the sol‐gel method were studied by transmission electron microscopy techniques. Morphology, structure and phase composition of silica gel containing Ga or In as function of the calcination and nitridation temperature were investigated.