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Interfacial reactions and silicate formation in highly dispersed Lu 2 O 3 – SiO 2 system
Author(s) -
KĘPIŃSKI L.,
KRAJCZYK L.,
DROZD M.
Publication year - 2006
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.2006.01625.x
Subject(s) - silicate , silicate glass , materials science , chemical engineering , mineralogy , chemistry , engineering
Summary Solid state interface reactions in highly dispersed Lu 2 O 3 – SiO 2 binary oxide system were studied at 600–1100 °C with X‐ray powder diffraction (XRD), high‐resolution transmission electron microscopy (HRTEM) and Fourier Transform Infrared spectroscopy (FTIR). The results show that at 600–900 °C an amorphous, nanometer thick Lu‐O‐Si layer covering SiO 2 particles exists in the system. At higher temperatures the breakage of the layer into amorphous islands occurs and crystalline silicates with various structures are formed. In particular, Lu 4 [Si 3 O 10 ][SiO 4 ] silicate, analogue of B‐type Dy – Tm disilicates, forms at 1000 °C.