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Well‐orientated cubic boron nitride nanocrystals as studied by high‐resolution transmission electron microscopy
Author(s) -
TSIAOUSSIS I.,
FRANGIS N.
Publication year - 2006
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.2006.01620.x
Subject(s) - boron nitride , nanocrystal , transmission electron microscopy , materials science , substrate (aquarium) , nanostructure , sputter deposition , nitride , texture (cosmology) , high resolution transmission electron microscopy , stacking , nanotechnology , crystallography , thin film , sputtering , chemistry , layer (electronics) , artificial intelligence , computer science , oceanography , image (mathematics) , organic chemistry , geology
Summary In a boron nitride thin film, grown on a Si (100) substrate by radio frequency magnetron sputtering, a striking nanostructure is observed by high‐resolution transmission electron microscopy. It consists of cubic boron nitride nanocrystals with a rather good triangular shape, pointing always to the substrate. The nanocrystals are usually highly defected and present their own interesting internal structure. Texture formation is observed within a nanocrystal, with all the subgrains observed to have a common <011> axis, which is also approximately parallel to a <011> axis of the Si substrate, i.e. the nanocrystals are very well structurally orientated in relation to the Si substrate (self‐organized). Dislocations and stacking faults are also found in the nanocrystals.