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Quantitative high resolution transmission electron microscopy of nanostructured semiconductors
Author(s) -
NEUMANN W.,
KIRMSE H.,
HÄUSLER I.,
OTTO R.
Publication year - 2006
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.2006.01619.x
Subject(s) - high resolution transmission electron microscopy , transmission electron microscopy , materials science , semiconductor nanostructures , semiconductor , quantum dot , nanostructure , energy filtered transmission electron microscopy , resolution (logic) , strain (injury) , nanotechnology , electron microscope , chemical physics , optoelectronics , scanning transmission electron microscopy , chemistry , optics , physics , computer science , medicine , artificial intelligence
Summary Peak‐finding procedures and the geometric phase method of quantitative high resolution electron microscopy (qHRTEM) were applied to determine the local strain and the chemical composition of nanostructured semiconductor materials. The growth of the structures investigated was induced by minimization of strain energy. The analysis of strain distribution is necessary for the understanding of the self‐organized formation of nanostructures. The possibilities and limitations of the methods are discussed in detail by analysing HRTEM images of (Si,Ge) islands and of a double layer of stacked quantum dots of (In,Ga)As and Ga(Sb,As).