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Polarization contrast in photon scanning tunnelling microscopy combined with atomic force microscopy
Author(s) -
PROPSTRA K.,
HULST N. F.
Publication year - 1995
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.1995.tb03672.x
Subject(s) - optics , microscopy , near field scanning optical microscope , polarization (electrochemistry) , materials science , silicon nitride , optical microscope , conductive atomic force microscopy , scanning ion conductance microscopy , ray , photon , silicon , optoelectronics , chemistry , scanning confocal electron microscopy , atomic force microscopy , physics , nanotechnology , scanning electron microscope
Summary Photon scanning tunnelling microscopy combined with atomic force microscopy allows simultaneous acquisition and direct comparison of optical and topographical images, both with a lateral resolution of about 30 nm, far beyond the optical diffraction limit. The probe consists of a modified microfabricated silicon nitride tip mounted on a cantilever, commercially available for atomic force microscopy. The lateral resolution is further improved using ‘supertips’, by depositing a small needle on the silicon nitride tip. The combined microscopic technique is applied to thin films of indium tin oxide because of the small grain size and high surface flatness, providing high‐resolution optical contrast and limited far‐field scattering contribution. Polarization contrast is shown in experiments both changing the polarization of the incident and detected light. Approach curves, both measuring the optical signal and force interaction, show a difference in the optical coupling between p‐ and s‐polarized incident light. p‐Polarized light always provides optical contrast more correlated to topography than s‐polarized light, both for incident and detected light, in agreement with theoretical models.