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Optoelectronic detector probes for scanning near‐field optical microscopy
Author(s) -
DANZEBRINK H. U.
Publication year - 1994
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.1994.tb03525.x
Subject(s) - near field scanning optical microscope , optical microscope , materials science , scanning probe microscopy , optics , microscopy , optoelectronics , photodetector , detector , scanning capacitance microscopy , semiconductor , vibrational analysis with scanning probe microscopy , aperture (computer memory) , scanning ion conductance microscopy , scanning confocal electron microscopy , scanning electron microscope , physics , acoustics
A brief explanation of the optoelectronic probe concept and a comparison between the implementation of passive waveguide probes and optoelectronic probes in scanning near‐field optical microscopy (SNOM) is presented. The first probe realizations using cleaved semiconductor crystals and the work at present in progress using microfabricated Si pyramids are described. These crystals with evaporated metal electrodes forming a slit aperture with subwave‐length dimensions work as metal–semiconductor–metal photodetectors. Their optical detection behaviour is investigated by measuring the intensity distribution of a laser focal point. Measurements where the external bias voltage is changed show that it is possible to modify the detection behaviour of the device because of the varying depletion widths. The last part of the article describes a concept where pyramidal probes should function simultaneously as sensors for scanning force microscopy (SFM) to measure topography and as optoelectronic probes for scanning near‐field optoelectronic microscopy (SNOEM).