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A Monte Carlo code to simulate the effect of fast secondary electrons on κ AB factors and spatial resolution in the TEM
Author(s) -
Gauvin Raynald,
L'Espérance Gilles
Publication year - 1992
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.1992.tb03258.x
Subject(s) - monte carlo method , electron , secondary electrons , resolution (logic) , image resolution , computational physics , scattering , physics , inelastic scattering , binary number , diffusion , optics , materials science , atomic physics , nuclear physics , computer science , statistics , mathematics , artificial intelligence , thermodynamics , arithmetic
SUMMARY Fast secondary electrons (FSE), which result from inelastic scattering of incident electrons, are known to generate a significant number of X‐rays for light elements, and also to degrade the spatial resolution of X‐ray microanalysis in thin foils. A Monte Carlo program simulating the generation and diffusion of FSE in binary systems has been developed to study the effect of composition on κ AB factors and spatial resolution. The effect of accelerating voltage and thickness is also presented.