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Electron microscopic study of the atomic structure of OMVPE‐grown GaInAs/InP quantum wells
Author(s) -
Hsu Tung,
Wang T. Y.,
Stringfellow G. B.
Publication year - 1991
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.1991.tb03179.x
Subject(s) - epitaxy , materials science , metalorganic vapour phase epitaxy , quantum well , vapor phase , optoelectronics , reflection (computer programming) , electron microscope , chemical vapor deposition , group 2 organometallic chemistry , chemistry , nanotechnology , optics , laser , physics , layer (electronics) , computer science , thermodynamics , programming language , organic chemistry , molecule
SUMMARY The as‐grown (001) surfaces of InP single crystals and GaInAs/InP multilayers grown under different conditions by organometallic vapour phase epitaxy (OMVPE) have been studied using reflection electron microscopy (REM). It was found that atomically smooth surfaces can be grown by OMVPE using the proper growth conditions. A small density of elliptical defects also found on these surfaces may be attributed to abnormal growth due to defects formed during the growth process.