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Preliminary characterization of an intrinsic germanium detector on a 400‐keV microscope
Author(s) -
White T. J.,
Cousens D. R.,
Auchterlonie G. J.
Publication year - 1991
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.1991.tb03148.x
Subject(s) - germanium , detector , microscope , characterization (materials science) , semiconductor detector , optics , electron microscope , materials science , optoelectronics , physics , silicon
SUMMARY An evaluation was made of an intrinsic germanium X‐ray detector fitted to a 400‐keV electron microscope. Its characteristics as a function of accelerating voltage, pulse processor settings and count rate were investigated. Comparisons are drawn between intrinsic Ge and Si(Li) detectors at both an experimental and theoretical level. The software requirements for the successful collection of spectra are discussed.