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The preparation of plan‐view TEM samples of ZnSe epilayers on GaAs (100) substrates by selective photoelectrochemical etching
Author(s) -
Ng T. L.,
Pemble M. F.,
Williams J. O.,
Wright A. C.,
Zainal Z.
Publication year - 1988
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.1988.tb04584.x
Subject(s) - metalorganic vapour phase epitaxy , materials science , etching (microfabrication) , substrate (aquarium) , epitaxy , transmission electron microscopy , optoelectronics , band gap , nanotechnology , oceanography , layer (electronics) , geology
SUMMARY Selective photoelectrochemical etching has been employed in order to thin samples of ZnSe epilayers grown on GaAs (100) substrates by metal organic vapour phase epitaxy (MOVPE). The difference in band‐gap between the epilayer and substrate was exploited such that only the substrate material was subject to the etching procedure. Samples prepared in this way have been studied by transmission electron microscopy (TEM) and the results of these studies are compared to results obtained by alternative cross‐sectional analysis.