Premium
Voltage‐dependent imaging of antimony on the GaAs(110) surface
Author(s) -
Mårtensson P.,
Feenstra R. M.
Publication year - 1988
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.1988.tb01447.x
Subject(s) - dangling bond , antimony , voltage , context (archaeology) , materials science , surface (topology) , scanning tunneling microscope , condensed matter physics , chemistry , optoelectronics , nanotechnology , physics , silicon , geometry , paleontology , mathematics , quantum mechanics , metallurgy , biology
SUMMARY Using a scanning tunnelling microscope, voltage‐dependent imaging of antimony on the GaAs(110) surface has been performed. For negative sample voltages, the images reflect surface dangling bonds. Depending on the magnitude of the voltage, either one or both of the Sb atoms in the surface unit cell are seen. At positive voltage the density of surface‐states is observed to be greatly reduced compared to negative voltages. The results are analysed within the context of a simple tight‐binding model for a one‐dimensional biatomic chain.