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Scanning tunnelling microscopy of B/Si(111) √3×√3 R(30°)
Author(s) -
Dumas Ph.,
Thibaudau F.,
Salvan F.
Publication year - 1988
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.1988.tb01446.x
Subject(s) - superstructure , scanning tunneling microscope , auger , boron , materials science , doping , quantum tunnelling , crystallography , microscopy , silicon , chemistry , nanotechnology , atomic physics , optoelectronics , optics , physics , organic chemistry , thermodynamics
SUMMARY The √3 superstructure induced by boron outdiffusion at the surface of highly p doped Si(111) samples is studied by means of Auger, LEED and STM. Simultaneous double imaging at different voltages allows us to probe both filled and empty electronic states. A modification of the T 4 structural model of (Al, In, Ga)/Si(111) √3 is proposed for the B/Si(111) √3 superstructure.