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Metal‐induced reconstructions of the silicon(111) surface
Author(s) -
Park Sangil,
Nogami J.,
Quate C. F.
Publication year - 1988
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.1988.tb01443.x
Subject(s) - scanning tunneling microscope , surface reconstruction , deposition (geology) , silicon , metal , reflection high energy electron diffraction , surface (topology) , materials science , crystallography , surface structure , range (aeronautics) , phase (matter) , chemistry , chemical physics , mineralogy , geology , nanotechnology , epitaxy , geometry , metallurgy , layer (electronics) , paleontology , composite material , mathematics , organic chemistry , sediment
SUMMARY We have used scanning tunnelling microscopy (STM) to study changes in the structure of the Si(111) surface induced by deposition of the group III metals In and Ga. For both metals, several different ordered reconstructions are seen as a function of coverage. The STM images provide new structural information on each of these reconstructions. With In metal deposition, we have seen the surface reconstructions √3×, √3, √31× √31, √7×√3 and 4×1 as the coverage increases. In the case of Ga on Si(111), we have studied structures that exist up to 0·7 ML. At 1/3 ML, there is a √3×√3 structure identical to that of In. Above 0·3 ML there is a different phase that may correspond to the (6·3times6·3) RHEED pattern reported in this coverage range. This surface tends to grow as triangular islands at higher coverages.