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Investigation of intrinsic crystalline Si(111) and amorphous silicon surfaces in air with STM
Author(s) -
Okoniewski A. M.,
Yelon A.
Publication year - 1988
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.1988.tb01411.x
Subject(s) - amorphous solid , silicon , amorphous silicon , materials science , scanning tunneling microscope , quantum tunnelling , crystalline silicon , range (aeronautics) , nanotechnology , crystallography , optoelectronics , chemistry , composite material
SUMMARY Crystalline (111) and amorphous silicon surfaces have been studied by scanning tunnelling microscopy. An orientated, reproducible, corrugated structure has been observed on Si(111) surfaces. The voltage dependence of the corrugation amplitude may be attributable to surface states. The surfaces of amorphous silicon thin films show some reproducible structure in the range of a few tens of ångströms, observable only when the applied voltage between the tip and sample is between −1·3 and +0·4V.