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Scanning tunnelling microscopy on reconstructed Si(110)
Author(s) -
Neddermeyer H.,
Tosch St.
Publication year - 1988
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1111/j.1365-2818.1988.tb01373.x
Subject(s) - surface reconstruction , scanning tunneling microscope , diffraction , quantum tunnelling , microscopy , optics , materials science , resolution (logic) , surface (topology) , crystallography , intensity (physics) , molecular physics , chemistry , physics , nanotechnology , optoelectronics , geometry , computer science , mathematics , artificial intelligence
SUMMARY We have prepared clean surfaces of reconstructed Si(110), which showed a distinct 4×5 LEED pattern with particularly high intensity of the diffraction beams corresponding to a 2×1 periodicity of the surface. Images obtained by scanning tunnelling microscopy on the same surfaces are characterized by rows of reconstructed Si atoms along the direction. On high‐resolution images, atomic subunits in a 2×5 periodicity of ideal Si(110) have been identified. By using these subunits as building blocks for both the 4×5 and the 2×1 reconstruction, a previously reported phase transition between both reconstructions may be explained by a loss of order along the direction.